Thin-Film Edge Field Emitter Device

reportActive / Technical Report | Accession Number: ADD018901 | Open PDF

Abstract:

A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second port ion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second port ion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Author(s):
Hsu, David S. ; Gray, Henry F.
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON DC
Descriptive Note:
Patent application, filed 20 Apr 98
Pagination:
0060

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-062 735
Monitor Series:
NAVEXOS
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*PATENT APPLICATIONS, *EMITTERS, THIN FILMS, SEMICONDUCTORS, ELECTRON EMISSION, LOW VOLTAGE
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
*FIELD EMITTER ARRAYS
Report Date:
1998 Apr 20
Creation Date:
1998 Jul 22