Ohmic Contact for Semiconductor

reportActive / Technical Report | Accession Number: ADD018669 | Open PDF

Abstract:

An electronic semiconductor device comprising a semiconductor base deposited on a semiconductor substrate by means of molecular beam epitaxy and source, drain and gate disposed on the base in a spaced relationship to each other, the source and the drain comprising PdbarrierAu layers with the palladium layer being in contact with the device. The device is fabricated conventionally except the heat treating is at above about 170 deg C for 14-10 hours sufficient for the palladium layer to react with the base yielding reduced contact and access resistances and a narrower spacing between source and drain.

Author(s):
Boos, John B.
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON DC
Descriptive Note:
Patent Application, Filed 27 Mar 97
Pagination:
0021

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-826 110
Monitor Series:
ONR
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*PATENT APPLICATIONS, *SEMICONDUCTORS, *ELECTRIC CONTACTS, LAYERS, RESISTANCE, ELECTRONIC EQUIPMENT, SUBSTRATES, REDUCTION, GOLD, PALLADIUM, MOLECULAR BEAM EPITAXY
Field(s)/Group(s):
Electrical and Electronic Equipment, Electricity and Magnetism
Keyword(s):
*OHMIC CONTACT
Report Date:
1997 Mar 27
Creation Date:
1998 Feb 11