Lower Bandgap, Lower Resistivity, Silicon Carbide Heteroepitaxial Material, and Method by Making Same.

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Abstract:

A silicon carbide semiconductor material, and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 12OO C or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.

Author(s):
Kelner, Galina ; Spencer, Michael G. ; Dmitriev, Vladamir A. ; Irvine, K.
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON DC
Descriptive Note:
Patent Application, Filed 17 Jan 95,
Pagination:
0012

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-374 474
Monitor Series:
ONR
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*PATENT APPLICATIONS, *EPITAXIAL GROWTH, *SEMICONDUCTOR DEVICES, LAMINATES, HETEROJUNCTIONS, REDUCTION, ELECTRICAL RESISTANCE, SILICON CARBIDES
Field(s)/Group(s):
Solid State Physics
Report Date:
1995 Jan 17