Substrate Temperature Control Apparatus and Technique for CVD Reactors.

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Abstract:

One of the critical experimental parameters affecting the quality and growth rate of chemical vapor deposition species, such as, diamond is the substrate temperature. An apparatus and technique for the precise control of the substrate temperature in a chemical vapor deposition environment has been developed. In a preferred embodiment, the technique uses a variable gas mixture in conjunction with the disclosed apparatus of the present invention to precisely control the temperature of the substrate to within at least - 20 deg C for extended periods of time and over large area substrates on the order of 1 in diameter or larger

Author(s):
Snail, Thomas A. ; Thorpe, Thomas P.
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON DC
Descriptive Note:
Patent Application, filed 18 May 93,
Pagination:
0026

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release, Document Partially Illegible
Distribution Statement:
Availability: Document Partially Illegible.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-062 889
Monitor Series:
ONR
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SUBSTRATES, *TEMPERATURE CONTROL, *PATENT APPLICATIONS, CONTROL, DIAMETERS, DIAMONDS, ENVIRONMENTS, MIXTURES, PARAMETERS, QUALITY, VAPOR DEPOSITION, VARIABLES, CHEMICAL REACTIONS, GASES, MIXTURES, COMPOSITE MATERIALS
Field(s)/Group(s):
Physical Chemistry, Laminates and Composite Materials, Thermodynamics, Coatings, Colorants and Finishes
Keyword(s):
Apparatus, *Chemical vapor deposition, CVD(Chemical Vapor Deposition)
Report Date:
1993 May 18