Radiation-Induced Substrate Photo-Current Compensation Apparatus.

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Abstract:

A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor. Patent applications. rh

Author(s):
Hughes, Arlen J.
Author Organization(s):
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Descriptive Note:
Patent Application, Filed 21 Mar 88,
Pagination:
0019

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-017 530
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*FIELD EFFECT TRANSISTORS, *PATENT APPLICATIONS, *RADIATION, *SAPPHIRE, *SEMICONDUCTORS, *SILICON, *SUBSTRATES, COMPENSATION, DRAINAGE, ELECTRODES, GEOMETRY, PRECISION
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Report Date:
1988 Mar 21