Dual Active Layer Photoconductor.

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Abstract:

A photoconductive semiconductor device having a source, a drain, and a photosensitive channel there between. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channels surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channels surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide. Patent applications. mjmrh

Author(s):
Thompson, Phillip E. ; Pananicolaou, Nicholas A. ; Boos, J. B.
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON DC
Descriptive Note:
Patent Application, Filed 29 Jun 88,
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-212 841
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*GALLIUM ARSENIDES, *PATENT APPLICATIONS, *PHOTOCONDUCTIVITY, *PHOTOCONDUCTORS, *SEMICONDUCTOR DEVICES, CHANNELS, DARKNESS, DEPLETION, DOPING, ION IMPLANTATION, LAYERS, PHOTOSENSITIVITY, SURFACES
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1988 Jun 29