Formation of Thin-Film Resistors on Silicon Substrates.

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Abstract:

The present invention relates broadly to thin-film resistors and in particular to the formation of thin-film resistors on silicon substrates by ion implantation. A method of making thin film resistor structures for radiation-hardened integrated circuits is disclosed. The resistor is formed using a thin-film metallic conductor layer such as tantalum or chromium silicide which is deposited by ion implantation on the surface of fused phosphosilicate glass PSC or borophosphosilicate glass BPSG substrate. Implantation is at an energy level which provides sufficient penetration to insure good adhesion and the resistor is annealed at temperatures up to 700 C. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate. Advantages of ion implantation include very accurate control of dosage, and good adhesion of deposited films.

Author(s):
Schnable, George L.
Author Organization(s):
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Descriptive Note:
Patent Application, Filed 26 Feb 88,
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-160 893
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application
Communities of Interest:
Advanced Electronics
Descriptor(s):
*FILM RESISTORS, *INTEGRATED CIRCUITS, *RADIATION HARDENING, *SILICIDES, *THIN FILMS, *PATENT APPLICATIONS, ADHESION, ALUMINUM, ANNEALING, CHROMIUM, CONTROL, DEPOSITION, DOSAGE, ENERGY LEVELS, FILMS, ION IMPLANTATION, METALS, RESISTORS, SILICON, STRUCTURES, SUBSTRATES, TANTALUM, TEMPERATURE
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1988 Feb 26