Measurement of Film Thickness of Integrated Circuits.

reportActive / Technical Report | Accession Number: ADD012750 | Need Help?

Abstract:

A Narrow, high energy, electron beam is caused to impinge upon an integrated circuit. The accelerating voltage of the electron beam is increased in incremental steps 3 or more so that the electrons penetrate into the film and then into the substrate. The transmitted electrons interact with the film and substrate materials to generate distinct X rays. The relative X ray intensities of the film material to that of the substrate material is utilized of the film material to that of the substrate material is utilized to determine the film thickness. Patent application

Author(s):
Sartore, Richard G.
Author Organization(s):
DEPARTMENT OF THE ARMY WASHINGTON DC
Descriptive Note:
Patent Application,
Pagination:
0024

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis. Microfiche Copies Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-043-271
 Subject Terms
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*PATENT APPLICATIONS, *ELECTRON BEAMS, *FILMS, *THICKNESS, *X RAY SPECTROSCOPY, *PENETRATION, ELECTRONS, HIGH ENERGY, INTEGRATED CIRCUITS, MATERIALS, SUBSTRATES, VOLTAGE, ELECTRONS, HIGH ENERGY, INTEGRATED CIRCUITS,
Field(s)/Group(s):
Test Facilities, Equipment and Methods, Solid State Physics
Report Date:
1987 Apr 23