Interdigital Schottky Barrier Capacitor Apparatus.

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Abstract:

The present invention relates broadly to Schottky barrier capacitors, and in particular to an interdigital Schottky barrier capacitor apparatus. In the prior art, the Schottky barrier diode is rather well known. In general, a Schottky barrier device comprises a semiconductor substrate layer that is formed by a first layer of heavily doped materials and a second layer of lightly doped materials upon which a layer of barrier metal is deposited thereon. The maximum reverse bias voltage which can be appplied to the Schottky barrier device is determined by the thickness of the lightly doped layer of semiconductive material which is deposited upon the substrate layer. This is only one of the factors that determined the reverse bias voltage, When a guardring is diffused into the lightly doped layer of semiconductive substrate material, the thickness of the layer is reduced, and therefore, the reverse bias voltage that can be applied to the Schottky device is reduced.

Author(s):
Bierig,
Author Organization(s):
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Descriptive Note:
Patent Application,
Pagination:
0019

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release, Document Partially Illegible
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis. Document Partially Illegible.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-731 223
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*PATENT APPLICATIONS, *SCHOTTKY BARRIER DEVICES, *CAPACITORS, *DIODES, DOPING, MATERIALS, INVENTIONS, BIAS, VOLTAGE, SEMICONDUCTORS, SUBSTRATES, LAYERS, BARRIERS, METALS, THICKNESS
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1985 May 07