Process of and Apparatus for Laser Annealing of Film-Like Surface Layers of Chemical Vapor Deposited Silicon Carbide and Silicon Nitride.

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Abstract:

A process of an related apparatus for achieving laser annealing of film-like surface layers of chemical vapor deposited silicon nitride and silicon carbide to relieve their inherent residual stresses. A laser beam is used to anneal the layers, in conjunction with a photoacoustic gas cell and related beam modulating means for utilizing a photoacoustic effect principal for monitoring, detecting and effectuating beam control as needed during the laser annealing process.

Author(s):
Rose, Douglas N.
Author Organization(s):
DEPARTMENT OF THE ARMY WASHINGTON DC
Descriptive Note:
Patent Application,
Pagination:
0019

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-496 366
 Subject Terms
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
*Patent applications, *Annealing, *Laser beams, *Silicon carbides, *Silicon nitrides, Methodology, Vapor deposition, Thin films, Argon lasers, Ceramic coatings, Substrates, Acoustics, Optics
Field(s)/Group(s):
Coatings, Colorants and Finishes, Metallurgy and Metallography
Keyword(s):
*Laser annealing, Photoacoustics
Report Date:
1983 May 20