Microwave-Infrared Detector with Semiconductor Superlattice Region.

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Abstract:

This invention concerns a detector andor mixer of electromagnetic energy in the microwave-infrared region of the electromagnetic spectrum and is comprised of a body of semiconductor material having a superlattice region consisting of, for example, InAs - GaSb wherein the thickness of alternating epitaxial planar layers is in the range of 30A to 80A. Incident radiation perpendicular to the planar regions results in an electric field being provided in the plane of the layers which causes a reduction in the superlattice bandwidth and accordingly an increase in the transverse effective mass of the carriers. This results in a decrease in the perpendicular conductivity through the superlattice region. Author

Author(s):
Esaki, Leo ; Sai-halasz, George A.
Author Organization(s):
DEPARTMENT OF THE ARMY WASHINGTON DC
Descriptive Note:
Patent Application,
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-172 794
 Subject Terms
Joint Capability Areas:
JCA_6_Net Centric
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Patent applications, *Infrared detectors, *Microwaves, *Semiconductors, Electromagnetic spectra, Lattice dynamics, Superconductors, Inventions, Crystal lattices, Planar structures, Electromagnetic radiation, Epitaxial growth, Mixers(Electronics), Electric fields, Layers, Bandwidth
Field(s)/Group(s):
Infrared Detection and Detectors, Solid State Physics
Report Date:
1980 Jul 28