Refractory Oxide-Refractory InP Schottky Barrier.

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Abstract:

This abstract discloses a Schottky barrier with InP formed by disposing a very thin film 150 A of a refractory metal oxide over an InP layer and then disposing a thin film of a refractory metal over the refractory metal oxide. The resulting Schottky barrier is high greater than 0.65eV with very low leakage current. By way of example, the refractory metal oxide may be TiO2 and the refractory metal TiW.

Author(s):
Christou, Aristos
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON DC
Descriptive Note:
Patent Application,
Pagination:
0016

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-336 132
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Patent applications, *Schottky barrier devices, *Indium phosphides, Refractory metals, Thin films, Metal oxide semiconductors, Low level, Leakage(Electrical), Inventions
Field(s)/Group(s):
Metallurgy and Metallography, Solid State Physics
Report Date:
1981 Dec 31