Monolithically Interconnected Series-Parallel Avalanche Diodes.

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Abstract:

Disclosed is an array of avalanche diodes and its method of manufacture which results in plural pairs of series connected mesa-etched avalanche TRAPATT diodes being selectively connected in parallel by metallized air bridges for increasing the impedance level and thereby the peak and average power level available from microwave oscillators and amplifiers configured therefrom. The various series connected diodes are placed in near proximity to respective neighboring diode pairs to reduce parasitics but at the same time the spacing is made sufficiently large to prevent thermal spreading of one diode pair to overlap that of the adjacent diode pair. The metallized air bridges in addition to providing a low inductance interconnection, provide an integrated heat capacitance which is necessary for high power operation. Author

Author(s):
Rosen, Arye ; Klatskin, Jerome B.
Author Organization(s):
DEPARTMENT OF THE ARMY WASHINGTON DC
Descriptive Note:
Patent application,
Pagination:
0008

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-303 537
 Subject Terms
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*Patent applications, *Avalanche diodes, *Microwave oscillators, *Circuit interconnections, Integrated systems, Monolithic structures(Electronics), Electric bridges, Power levels, High power, Capacitance, Air, Heat, Overlap, Bridges, Operation, Diodes, Impedance, Arrays, Metallizing
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
Air bridges, Pairs(Diode), Circuits(Parallel), Metallized bridges, Circuits(Series)
Report Date:
1981 Oct 07