A New Type of Superlattice.

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Abstract:

A superlattic structure is disclosed in which alternating layers of semiconductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy. The invention described herein may be manufactured and used by or for the government for governmental purposes without the payment of any royalties thereon or therefor. Author

Author(s):
Esaki, Leo ; Tsu, Raphael ; Sai-halasz, George Anthony ; Chang, Leroy Ligong
Author Organization(s):
DEPARTMENT OF THE ARMY WASHINGTON D C
Descriptive Note:
Patent Application,
Pagination:
0009

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-914 098
 Subject Terms
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*Patent applications, *Crystal lattices, Gallium antimonides, Arsenides, Indium compounds
Field(s)/Group(s):
Solid State Physics
Keyword(s):
Superlattices, Periodic structures
Report Date:
1978 Jun 09