Method for Producing Tailored Etch Rates and Edge Geometries in the Si3N4/Si02 Technology.

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Abstract:

The patent application concerns a method of controlling the etch rates of chemically deposited SiO2 and Si3N4 by ion implantation damage andor appropriate impurities. Ion implantation or addition of impurities into glossy materials provide species control, depth control, and disorder control, all of which affect the etch rate. Such control prevents shelving and provides a structure from which one may tailor the etch configuration useful in fabrication of silicon integrated circuits.

Author(s):
Davey, John E.
Author Organization(s):
DEPARTMENT OF THE NAVY WASHINGTON D C
Descriptive Note:
Patent Application,
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
This Government-owned Invention Available For U.s. Licensing And, Possibly, For Foreign Licensing. Copy Of Application Available Ntis.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
PAT-APPL-732 848
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*Silicon dioxide, *Silicon nitrides, *Etching, *Patent applications, Ion implantation, Silicon, Integrated circuits, Films, Vapor deposition, Impurities
Field(s)/Group(s):
Electrical and Electronic Equipment, Manufacturing and Industrial Engineering and Control of Production Systems, Solid State Physics
Keyword(s):
Chemical vapor deposition, PAT CL 156 3
Report Date:
1976 Oct 18