Optically Activated Switch Using High Power Laser Diode Arrays

reportActive / Technical Report | Accession Number: ADA638296 | Open PDF

Abstract:

Because of their high PRF capability and compact size gallium arsenide laser diodes offer distinct advantages as the light source in optically activated switches. In this paper various targets were investigated using a 500 watt laser diode array as the optical source. The targets included silicon, and gallium arsenide. Switch characteristics recovery, gap resistance, risetime were obtained as a function of optical energy, optical pulsewidth, and gap length. Bias voltages up to 6 kV were employed. Trade-offs in performance are discussed for the various targets.

Author(s):
Weiner, M. ; Burke, T. ; Youmans, R. ; Bovino, L. ; Carter, J.
Author Organization(s):
ARMY ELECTRONICS TECHNOLOGY AND DEVICES LAB FORT MONMOUTH NJ
Supplementary Note:
See also ADM002371. 2013 IEEE Pulsed Power Conference, Digest of Technical Papers 1976-2013, and Abstracts of the 2013 IEEE International Conference on Plasma Science. Held in San Francisco, CA on 16-21 June 2013. U.S. Government or Federal Purpose Rights License
Pagination:
0005

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Monitor Series:
AETADL
 Subject Terms
Modernization Areas:
Directed Energy
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*DIODE LASERS, *OPTICAL SWITCHING, ARRAYS, CIRCUITS, HIGH POWER, RESISTANCE, TARGETS, TEST AND EVALUATION
Field(s)/Group(s):
Lasers and Masers, Electrooptical and Optoelectronic Devices
Keyword(s):
LASER DIODE ARRAYS
Report Date:
1983 Jun 01
Creation Date:
2016 Oct 12