InAs1-xSbx Alloys with Native Llattice Parameters Grown on Compositionally Graded Buffers: Structural and Optical Properties

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Abstract:

GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-xSbx epitaxial alloys with strain-free native lattice constants up to 2.1 larger than that of GaSb. The in-plane lattice constant of the strained to buffer layer was grown to be equal to the native, unstrained lattice constant of InAs1-xSbx with given x. The InAs0.56As0.44 layers demonstrated a photoluminescence PL peak at 9.4 um at T150K. The minority carrier lifetime measured at 77K for InAs0.8Sb0.2 was 250 ns.

Author(s):
Wang, Ding ; Donetsky, Dmitry ; Lin, Youxi ; Kipshidze, Gela ; Shterengas, Leon ; Belenky, Gregory ; Sarney, Wendy L. ; Svensson, Stefan P.
Author Organization(s):
STATE UNIV OF NEW YORK AT STONY BROOK RESEARCH FOUNDATION
Descriptive Note:
Book
Supplementary Note:
Book chapter from Selected Topics in Electronics and Systems, v53. Frontiers in Electronics, Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11) Held in San Juan, Puerto Rico on 18-21 Dec 2011, p33-42.
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARO-62447-EL.3
Contract/Grant Number(s):
W911NF-12-2-0057
Monitor Series:
62447-EL.3, ARO
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ALLOYS, *OPTICAL PROPERTIES, BUFFERS, CHARGE CARRIERS, CONSTANTS, CRYSTAL LATTICES, LAYERS, LIFE EXPECTANCY(SERVICE LIFE), PEAK VALUES, PHOTOLUMINESCENCE, REPRINTS, STRUCTURAL PROPERTIES
Field(s)/Group(s):
Metallurgy and Metallography, Crystallography
Keyword(s):
PE611102A
Report Date:
2013 Aug 15
Creation Date:
2016 Mar 14