Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si

reportActive / Technical Report | Accession Number: ADA626838 | Open PDF

Abstract:

In this report, we describe the progress made in rolled-up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of electrically injected rolled-up InP-based tube lasers, which exhibit a threshold current 1.05 mA. We also describe the achievements of electrically injected AlGaN nanowire lasers that can operate in the UV-AII 315-340 nm, UV-B 280-315nm, and UV-C 200-280 nm.

Author(s):
Mi, Zetian
Author Organization(s):
MCGILL UNIV MONTREAL (CANADA)
Descriptive Note:
Final rept.
Supplementary Note:
The original document contains color images. DOI: 10.21236/ADA626838
Pagination:
0019

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARO-62606-EL.13
Contract/Grant Number(s):
W911NF-12-1-0477
Monitor Series:
62606-EL.13, ARO
 Subject Terms
Joint Capability Areas:
JCA_1.2.3_Educating; JCA_4.6_Engineering; JCA_5_Command and Control
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*NANOWIRES, *QUANTUM DOTS, GROWTH(GENERAL), INDIUM PHOSPHIDES, LASERS, NITRIDES, PHOTONICS, TUBES, ULTRAVIOLET RADIATION
Field(s)/Group(s):
Electrical and Electronic Equipment, Lasers and Masers
Keyword(s):
PE1D10BA
Report Date:
2015 Aug 30
Creation Date:
2016 Feb 24