Stripe Domain Structure in Epitaxial (001) BiFeO3 Thin Films on Orthorhombic TbScO3 Substrate

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Abstract:

We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality 001BiFeO3 films on orthorhombic 110 TbScO3 substrates. Two domains were present in stripes separated by 010 vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109 deg. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3-type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.

Author(s):
Folkman, C. M. ; Baek, S. H. ; Jang, H. W. ; Eom, C. B. ; Nelson, C. T. ; Pan, X. Q. ; Li, Y. L. ; Chen, L. Q. ; Kumar, A. ; Gopalan, V.
Author Organization(s):
WISCONSIN UNIV-MADISON DEPT OF MATERIALS SCIENCE AND ENGINEERING
Descriptive Note:
Journal article
Supplementary Note:
Published in the Journal of Applied Physics Letters, v94 article 251911, 2009.
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-07-1-0215
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_4.6_Engineering; JCA_1.2.3_Educating; JCA_1.2.5_Lessons Learned; JCA_6_Net Centric; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
Air Platforms
Descriptor(s):
*EPITAXIAL GROWTH, *THIN FILMS, SUBSTRATES
Field(s)/Group(s):
Electrical and Electronic Equipment, Crystallography
Report Date:
2009 Jun 26
Creation Date:
2014 Oct 01