High-speed >90% Quantum-Efficiency p-i-n Photodiodes with a Resonance Wavelength Adjustable in the 795-835 nm Range

We report GaAsAlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p i n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90. The maximum quantum efficiency was 92 at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.