Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

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Abstract:

In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing 300 deg C, low Schottky barrier height for holes 0.1 eV, low sheet resistance of Ni-InGaSb 53 ohmsquare , and low specific contact resistivity 7.6 x 10 expn -7 ohm cmexpn 2, show good progress toward antimonide-based metal sourcedrain SD p-channel metal oxide semiconductor field-effect transistors. Devices with a self-aligned metal SD were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ONOFF ratio 10expn 4, subthreshold swing 140 mVdecade, and high effective-field hole mobility of 510 cmexpn 2Vs at sheet charge density of 2 x 10expn 12 cmexpn -2.

Author(s):
Yun, Ze ; Kumar, Archana ; Chen, Chien-yu ; Nainani, Aneesh ; Bennett, Brian R. ; Boos, John B. ; Saraswat, Krishna C.
Author Organization(s):
NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
Descriptive Note:
Journal article
Supplementary Note:
Published in IEEE Electron Device Letters, v34 n11 p1367-1369, Nov 2013. Prepared in cooperation with the Center for Integrated Systems, Department of Electrical Engineering, Stanford University, Stanford, CA, and the ilicon System Group, Applied Materials Inc., Santa Clara, CA.
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Monitor Series:
NRL/ESTD
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_1_Force Support; JCA_5.3_Planning; JCA_6_Net Centric; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*FIELD EFFECT TRANSISTORS, *GALLIUM ANTIMONIDES, *METAL OXIDE SEMICONDUCTORS, *NICKEL ALLOYS, ELECTRICAL PROPERTIES, P TYPE SEMICONDUCTORS
Field(s)/Group(s):
Inorganic Chemistry, Electrical and Electronic Equipment, Metallurgy and Metallography
Keyword(s):
ANTIMONIDE SEMICONDUCTORS, NI GASB( NICKEL GALLIUM ANTIMONIDES), P CHANNEL MOSFET, MOSFET(METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS), HETEROSTRUCTURES, S D(SOURCE DRAIN), P MOSFETS WITH NI ALLOY S D
Report Date:
2013 Nov 01
Creation Date:
2014 Feb 19