Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn

reportActive / Technical Report | Accession Number: ADA558773 | Open PDF

Abstract:

Due to the indirect energy band of group IV materials of Si and Ge, these materials and their alloys cant be used to make optical devices. In this project, direct bandgap group IV alloy of GeSn alloy was developed. This report covers a growth techniques of GeSn alloy with various Sn compositions, b characterization of the alloy, and c physical properties of the alloy and identification of direct optical transitions.

Author(s):
Cheng, Hung Hsiang
Author Organization(s):
NATIONAL TAIWAN UNIV TAIPEI CENTER FOR CONDENSED MATTER SCIENCES
Descriptive Note:
Final rept. 18 Apr 2011-17 Apr 2012
Supplementary Note:
DOI: 10.21236/ADA558773
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AOARD-114037
Contract/Grant Number(s):
FA2386-11-1-4037
Monitor Series:
114037, AOARD
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*TIN ALLOYS, BAND GAPS, ENERGY BANDS, GERMANIUM, MOLECULAR BEAM EPITAXY, OPTICAL EQUIPMENT, SEMICONDUCTORS
Field(s)/Group(s):
Properties of Metals and Alloys, Solid State Physics
Keyword(s):
ELECTRONIC MATERIALS, HETEROSTRUCTURE SEMICONDUCTORS, LIGHT EMITTING DEVICES, OPTICAL TRANSITIONS, GERMANIUM TIN ALLOYS
Report Date:
2012 Mar 01
Creation Date:
2012 May 16