CdTe Photovoltaic Devices for Solar Cell Applications
Abstract:
Cadmium telluride CdTe has been recognized as a promising photovoltaic material for thin-film solar cells because of its near optimum bandgap of approx. 1.5 eV and high absorption coefficient. The energy gap is near optimum for a single junction solar cell and the high absorption coefficient allows films as thin as 2 microns to absorb more than 98 of the above-bandgap radiation. Cells with efficiencies near 17 have been produced for poly-CdTe materials. By alloying with mercury telluride HgTe, Hg1-xCdxTe0 is less than or equal to x less than or equal to 1 alloy can be obtained with a bandgap energy that falls between the end points of HgTe Eg -0.3 eV and CdTe Eg 1.5 eV. Because of its bandgap tunability with the Cd composition, Hg1-xCdxTe alloy has evolved to become the most importantversatile material for detector applications over the entire infrared wavelength range and has gained traction in the solar cell community.