Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates

Chichibu, Shigefusa; Hazu, Kouji

Epitaxial Growths of m-Plane AlGaN/GaN and AlInN/GaN Heterostructures Applicable for Normally-Off Mode High Power Field Effect Transistors on Freestanding GaN Substrates

Active / Technical Report | Accession Number: ADA548346 |

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Abstract:

Non-polar m-plane AlxGa1-xN and Al1-xInxN alloy films and heterostructures were grown by metalorganic vapor phase epitaxy MOVPE in order to obtain fundamental understandings on the growth of m-plane nitrides and carrier transport mechanisms. These alloys are being investigated for potential use in normally-off heterojunction field effect transistors HFETs.

Author(s):

Chichibu, Shigefusa ; Hazu, Kouji

Author Organization(s):

TOHOKU UNIV SENDAI (JAPAN) INST OF MULTIDISCIPLINARY RESEARCH FOR ADVANCED MATERIALS (IMRAM)

Descriptive Note:

Final technical rept.

Pagination:

0000

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

Distribution Statement:

Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR

Identifying Numbers

Report Number(s):

AOARD-104110

Contract/Grant Number(s):

FA2386-10-1-4100

Monitor Series:

AOARD

Subject Terms

Joint Capability Areas:

JCA_5_Command and Control; JCA_5.3_Planning; JCA_1.2.3_Educating; JCA_1.3.2_Personnel Management

Modernization Areas:

Microelectronics

Communities of Interest:

Air Platforms

Descriptor(s):

*ALLOYS, ALUMINUM GALLIUM NITRIDES, CHARGE CARRIERS, EPITAXIAL GROWTH, FIELD EFFECT TRANSISTORS, GALLIUM NITRIDES, HETEROJUNCTIONS, JAPAN, TRANSPORT PROPERTIES, VAPOR PHASES

Field(s)/Group(s):

Metallurgy and Metallography

Keyword(s):

FOREIGN REPORTS, MOVPE(METALORGANIC VAPOR PHASE EPITAXY), HFETS(HETEROJUNCTION FIELD EFFECT TRANSISTORS)

Report Date:

2011 Aug 17

Creation Date:

2011 Sep 26