Advanced Photonic Sensors Enabled by Semiconductor Bonding

In this three-year research program, we designed and constructed a unique system capable of fusion bonding two wafers in an ultra-high vacuum environment. This system was integrated with a multi-chamber system that contains with XPS and UPS surface analysis tools and RFDC sputtering system, to enable an experimental platform for insitu surface treatment, analysis, and bonding. We have developed various methods for preparing oxide-free silicon surfaces in UHV environment, and attempted in-situ fusion bonding of silicon wafer and InGaAs wafer. We have successfully demonstrated fusion bonding between HF-dipped silicon wafer and InGaAs wafer in UHV environment. On the device side, we have developed a detailed operational model of the VLPC devices. The device modeling capability provides us with the possibility of designing new generation of VLPC devices that feature improved performance characteristics, such as reduced timing jitter, high efficiency in the UV and telecommunication wavelength range, and lower dark counts.