Tunnel Quantum Dot Intersubband Detector for Terahertz Frequencies

The most significant accomplishments in this project are a the demonstration of a semiconductor based terahertz detector using quantum dots, capable of detection at high temperatures 80-150K with very low dark currents b a bias-selective multicolor long wavelength quantum dot intersublevel detector with tunability over 3 distinct wavelengths. The detector incorporates a novel double barrier tunneling heterostructure with each absorbing quantum dot layer c a novel intersubband quantum ring terahertz detector with a resonant tunneling filter to reduce the dark current, which is the lowest ever measured. This device demonstrates terahertz detection with 0.4AW in the 3-6THz range and detection in the 10-11 ThZ range at 120K.