Surface Morphology of Homoepitaxial GaSb Films Grown on Flat and Vicinal Substrates

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Abstract:

We have compared the surface morphology of GaSb homoepitaxial films grown on both flat and 1 deg vicinal miscut towards 1 1 1A 0 0 1 substrates using atomic force microscopy and scanning tunneling microscopy. Mound formation is observed for GaSb homoepitaxy on the flat substrates over a range of growth temperatures when either Sb2 or Sb4 is used to supply the group V flux. At sufficiently high growth temperatures, which are different depending on whether Sb2 or Sb4 is used, the mounds transform into fairly well-defined pyramids comprised of distinctly stacked layers that are clearly separated by monolayer-height steps.

Author(s):
Nosho, B. Z. ; Bennett, B. R. ; Aifer, E. H. ; Goldenberg, M.
Author Organization(s):
NAVAL RESEARCH LAB WASHINGTON DC
Descriptive Note:
Journal article
Supplementary Note:
Pub. in Jnl. of Crystal Growth, v236 p155-164, 2002.
Pagination:
0011

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means; JCA_5_Command and Control; JCA_5.3_Planning; JCA_8_Building Partnerships
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM ARSENIDES, *GALLIUM ANTIMONIDES, FLUX(RATE), GROWTH(GENERAL), HIGH TEMPERATURE, MOLECULAR BEAM EPITAXY, REPRINTS, SUBSTRATES, ELECTRON MICROSCOPY, SURFACE PROPERTIES, TEMPERATURE, ELECTRONIC SCANNERS
Field(s)/Group(s):
Inorganic Chemistry
Keyword(s):
ATOMIC FORCE MICROSCOPY
Report Date:
2001 Aug 01
Creation Date:
2008 Jul 09