Advanced TEM Sample Preparation Using Low Energy (Preprint)

reportActive / Technical Report | Accession Number: ADA476321 | Open PDF

Abstract:

The recent advent and availability of aberration-corrected STEM instruments means that more information about samples are visible, and important aspects of their chemistry, atom locations, surface properties, and microstructure are quantifiable in both 2D and 3D. Surface damage and unintended ion implanted layers incurred during ion beam-assisted TEM sample preparation are being more deeply recognized as artifacts limiting the information that can be obtained using analytical electron microscopy. Both the quality and quantity of scientific and technological results are impacted by artifacts because deleterious surface layers are often a significant fraction of total sample thickness, and also because more samples of more materials are being made by ion beam-assisted techniques. After initially being prepared using conventional broad-beam or focused ion-beam assisted milling, samples that have been post-processed with low voltage Ar ion beams show significant reductions in surface amorphous layer thickness, and also alteration of implanted Ga layers.

Author(s):
Scheltens, F. J. ; Wheeler, Iv., R. ; Mahalingam, K.
Author Organization(s):
UES INC DAYTON OH
Descriptive Note:
Conference paper
Supplementary Note:
The original document contains color images. All DTIC reproductions will be in black and white. Conference paper to be published in the Conference Proceedings of the Materials Research Society Symposium.
Pagination:
0008

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFRL-RX-WP-TP-2008-4022
Contract/Grant Number(s):
F33615-03-C-5206
Task Number(s):
13
Project Number(s):
4347
Monitor Series:
TP-2008-4022, AFRL-RX-WP
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_6.3_Net Management; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*ELECTRON MICROSCOPY, *LOW ENERGY, AMORPHOUS MATERIALS, THREE DIMENSIONAL, INSTRUMENTATION, SURFACE PROPERTIES, ION BEAMS
Field(s)/Group(s):
Atomic and Molecular Physics and Spectroscopy
Keyword(s):
*EELS(ELECTRON ENERGY LOSS SPECTROSCOPY), FOCUSED ION BEAM, MILLING, PE62102F, WUAFRL43471301
Report Date:
2007 Nov 01
Creation Date:
2008 Feb 13