Growth, Characterization, and Application of InGaN with the Full-range Indium Content

reportActive / Technical Report | Accession Number: ADA473773 | Open PDF

Abstract:

InGaN was grown, covering the entire indium composition range, to characterize the various compositions of the material and to implement white-light generation.

Author(s):
Yang, Chih-chung
Author Organization(s):
NATIONAL TAIWAN UNIV TAIPEI (TAIWAN) GRADUATE INST OF ELECTRO-OPTICAL ENGINEERING
Descriptive Note:
Final rept.
Pagination:
0033

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AOARD-05-4085
Contract/Grant Number(s):
FA5209-05-P-0440
Monitor Series:
05-4085, AOARD
 Subject Terms
Joint Capability Areas:
JCA_1.2.7_Experimentation; JCA_1.2.5_Lessons Learned; JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*CHEMICAL VAPOR DEPOSITION, *INDIUM, *WHITE LIGHT, MATERIALS, QUANTUM WELLS, THIN FILMS, LIGHT EMITTING DIODES, ULTRAVIOLET SPECTRA, COATINGS, LUMINESCENCE, EPITAXIAL GROWTH, FABRICATION, EMISSION SPECTRA
Field(s)/Group(s):
Inorganic Chemistry, Optics, Electrooptical and Optoelectronic Devices
Keyword(s):
*NANO CRYSTALS
Report Date:
2006 Jan 31
Creation Date:
2007 Nov 21