200 deg C Operation of a DC-DC Converter with SiC Power Devices

reportActive / Technical Report | Accession Number: ADA464822 | Open PDF

Abstract:

Design, operation, and performance evaluation of a 180 W, 100 kHz, 270 V28 V two-transistor forward dc-dc power converter are reported for elevated temperatures up to 200 deg C. Use of SiC power semiconductor devices, and high temperature powdered ferrite for magnetics design, and characterization of ceramic X7R capacitors leakage current over temperature are presented as well.

Author(s):
Ray, Biswajit ; Kosai, Hiroyuki ; Scofield, James D. ; Jordan, Brett
Author Organization(s):
UES INC DAYTON OH
Descriptive Note:
Conference paper (preprint)
Supplementary Note:
Submitted for presentation at the Applied Power Electronics Conference, 2007. Prepared in cooperation with Bloomsburg University of Pennsylvania, Bloomsburg, PA. Prepared in collaboration with Air Force Research Laboratory, Electrical Technology and Plasma Physics Branch (AFRL/PRPE), Wright-Patterson AFB, OH.
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFRL-PR-WP-TP-2007-201
Contract/Grant Number(s):
FA8650-04-D-2404-0004
Task Number(s):
SR
Project Number(s):
3145
Monitor Series:
TP-2007-201, AFRL-PR-WP
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6_Net Centric; JCA_6.1_Information Transport; JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_1.2.3_Educating; JCA_5_Command and Control; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*HIGH TEMPERATURE, *DC TO DC CONVERTERS, SYMPOSIA, SEMICONDUCTOR DEVICES, BIPOLAR TRANSISTORS, CERAMIC CAPACITORS, FERRITES, MAGNETIC DEVICES, LEAKAGE(ELECTRICAL), SILICON CARBIDES
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
*POWER DEVICES, BJT(BIPOLAR JUNCTION TRANSISTORS), PREPRINTS, PE65503F, WUAFRL3145SR73
Report Date:
2006 Nov 01
Creation Date:
2007 Apr 25