Engineering Support for High Power Density Gallium Nitride Microwave Transistors

reportActive / Technical Report | Accession Number: ADA397860 | Open PDF

Abstract:

Continuous and pulsed RF and IV on-wafer characterization was performed on gallium nitride high electron mobility transistors supplied by three independent sources. Measurements were performed over a range of temperatures and bias conditions to permit an indepth understanding of self-heating effects. Analysis was also performed to investigate substrate effects.

Author(s):
Harris, H. M. ; Laskar, J. ; Nuttinck, S.
Author Organization(s):
GEORGIA INST OF TECH ATLANTA
Descriptive Note:
Final rept. 1 Nov 1999-31 Dec 2001
Supplementary Note:
DOI: 10.21236/ADA397860
Pagination:
0119

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
A6113-000
Contract/Grant Number(s):
N00014-99-1-1100
Project Number(s):
A6113
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_4.6_Engineering; JCA_5_Command and Control; JCA_4.6.1_General Engineering; JCA_5.3_Planning; JCA_4.5.4_Requirements Definition; JCA_4.5_Operational Contract Support; JCA_1.2.5_Lessons Learned; JCA_1.3.2_Personnel Management; JCA_1.2.3_Educating
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*HIGH ELECTRON MOBILITY TRANSISTORS, *GALLIUM NITRIDES, HIGH POWER, ELECTRONIC EQUIPMENT, INTEGRATED CIRCUITS, THERMAL ANALYSIS, CRYOGENICS, RADIOFREQUENCY POWER
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
SELF HEATING
Report Date:
2002 Dec 31
Creation Date:
2002 Jan 23