High-Efficiency, Class-E RF Power Amplifiers

reportActive / Technical Report | Accession Number: ADA390017 | Open PDF

Abstract:

In this project, we developed several low-cost, high-efficiency RF power amplifiers. The final amplifier produced an output power of 1.1 kW, and was built with a pair of 4 MOSFETs in the style used for switching power supplies. The drain efficiency was 85 and the frequency was 7 MHz. This amplifier used a new switching amplifier class that we developed that combines the zero-voltage switching of Class E and the waveform control of Class F. We call the new class EF. This new class has also been applied to make a CMOS IC power amplifier that has an output of 2W at 2.4 GHz with an efficiency of 41.

Author(s):
Rutledge, David
Author Organization(s):
CALIFORNIA INST OF TECH PASADENA
Descriptive Note:
Final rept. 1 Jun 97-31 Aug 2000
Supplementary Note:
DOI: 10.21236/ADA390017
Pagination:
0008

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DAAG-55-97-1-0254
Monitor Series:
ARO
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6_Net Centric; JCA_6.1.2_Wireless Transmission; JCA_6.1_Information Transport; JCA_6.3.3_Spectrum Management; JCA_6.3_Net Management
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*POWER AMPLIFIERS, *RADIOFREQUENCY AMPLIFIERS, OUTPUT, CONTROL, WAVEFORMS, EFFICIENCY, DRAINAGE, POWER SUPPLIES, POWER, SWITCHING, RADIOFREQUENCY POWER
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
2001 Apr 30
Creation Date:
2001 May 30