EPR and Electrical Investigations of Point Defects and Hopping Motion in SiC Heavily Doped with Nitrogen

Active / Technical Report | Accession Number: ADA353811 |

This report results from a contract tasking Institute of Semiconductor Physics, National Academy of Sciences, Ukraine.

Author(s):

Author Organization(s):

Descriptive Note:

Final rept.

Pagination:

0012

Distribution:

Approved For Public Release

Collection: TR

Identifying Numbers

Report Number(s):

EOARD-SPC-97-4051

Contract/Grant Number(s):

F61708-97-W0176

Monitor Series:

SPC-97-4051, EOARD

Subject Terms

Joint Capability Areas:

JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_6.3_Net Management; JCA_8_Building Partnerships

Communities of Interest:

Descriptor(s):

*SEMICONDUCTORS, *POINT DEFECTS, ELECTRICAL PROPERTIES, NITROGEN, DOPING, SILICON CARBIDES, UKRAINE

Field(s)/Group(s):

Solid State Physics

Keyword(s):

FOREIGN REPORTS

Report Date:

1997 Jun 03

Creation Date:

1998 Sep 30