SIMOX Evaluation Program

reportActive / Technical Report | Accession Number: ADA351608 | Open PDF

Abstract:

The equipment bought under this project is used to study the reliability of devices fabricated on SIMOX substrates. SIMOX separation-by-implantation-of-oxygen material is used primarily for low power IC application. The reliability of devices fabricated on SIMOX substrates is influenced by oxide degradation due to charge trapping, interface state generation, and bulk trap generation in SIMOX.

Author(s):
Bhar, Tarak
Author Organization(s):
DISTRICT OF COLUMBIA UNIV WASHINGTON
Descriptive Note:
Final rept. 15 Jul 97-14 Mar 98
Pagination:
0008

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFRL-SR-BL-TR-98-0578
Contract/Grant Number(s):
F49620-97-0516
Project Number(s):
4276
Monitor Series:
TR-98-0578, AFRL-SR-BL
 Subject Terms
Joint Capability Areas:
JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_1.2.3_Educating; JCA_6.1.3_Switching and Routing; JCA_6.1.1_Wired Transmission; JCA_6.1_Information Transport; JCA_6_Net Centric
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*INTEGRATED CIRCUITS, *ION IMPLANTATION, *OXYGEN, *RELIABILITY, *SEPARATION, TEST AND EVALUATION, LOW POWER, AIR FORCE RESEARCH, DEGRADATION, INTERFACES, ELECTRONIC EQUIPMENT, FABRICATION, SUBSTRATES, TRAPPING(CHARGED PARTICLES), OXIDES, ELECTRIC CHARGE, BULK SEMICONDUCTORS
Field(s)/Group(s):
Inorganic Chemistry, Electrical and Electronic Equipment
Keyword(s):
SIMOX(SEPARATION BY IMPLANTATION OF OXYGEN), PE62228D
Report Date:
1998 Mar 14
Creation Date:
1998 Sep 09