QWIP and MCT for Long Wavelength and Multicolor Focal Plane Array Applications

Infrared IR sensor technology is critical to all phases of ballistic missile defense. Traditionally, material systems such as indium antimonide InSb, platinum silicide PtSi, mercury cadmium telluride MCT, and arsenic doped silicon SiAs have dominated IR detection. Improvement in surveillance sensors and interceptor seekers requires large, highly uniform, and multicolor or multispectral IR focal plane arrays involving mid-wave NW, long-wave LW, and very-long-wave VLW IR regions. Among the competing technologies are quantum-well infrared photodetectors QWIPs base on lattice-matched GaAsAlGaAs an strained layer InGaAsAlGaAs material systems. Even though QWIP cannot compete with MCT at the single device level considering the quantum efficiency and D, it has potential advantages over MCT for LW and VLW focal plane array applications in terms of the array size, uniformity, operability, yield, reliability, and cost effectiveness. QWIPs are especially promising for VLWIR at low temperature operation, and when simultaneous multicolor detection with a single focal plane array is desired. Operating a VLWIR focal plane array at low background is a challenge to both MCT and QWIP, while QWIP has more potential to be realized due to its good properties at low temperatures. In this paper, I discuss cooled IR technology with an emphasis on QWIP and MCT. I give details concerning device physics, material growth, device fabrication, device performance, and cost effectiveness for LWIR, VLWIR, and multicolor applications.