Cubic Silicon Carbide (3C SiC): Growth and Properties of Single Crystals and Polycrystalline Layers Prepared by Thermal Decomposition of Methyltrichlorosilance in Hydrogen

reportActive / Technical Report | Accession Number: ADA338896 | Open PDF

Abstract:

This report results from a contract tasking Russian Academy of Sciences as follows Investigate the process of growing cubic silicon carbide from the vapor phase in the form of single crystals and polycrystalline layers that can be used for the production of various semiconducting devices and passive elements.

Author(s):
Gorin, Stanislov
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF PHYSICAL CHEMISTRY
Descriptive Note:
Final rept.
Pagination:
0021

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
EOARD-SPC 94-4106
Contract/Grant Number(s):
F61708-94-W-0930
Monitor Series:
SPC 94-4106, EOARD
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SINGLE CRYSTALS, *SILICON CARBIDES, *POLYCRYSTALLINE, THERMAL PROPERTIES, PRODUCTION, METHYL RADICALS, LAYERS, PASSIVE SYSTEMS, SEMICONDUCTOR DEVICES, VAPOR PHASES, HYDROGEN, RUSSIA, DECOMPOSITION, PYROLYSIS, CHLOROSILANES
Field(s)/Group(s):
Inorganic Chemistry
Keyword(s):
FOREIGN REPORTS, 3C SIC, CUBIC SILICON CARBIDE, METHYLTRICHLOROSILANE
Report Date:
1994 Oct 07
Creation Date:
1998 Apr 01