MBE Growth of GaInAsSb.

reportActive / Technical Report | Accession Number: ADA328229 | Open PDF

Abstract:

Optimum growth conditions for high quality growth of GaAs, GaSb, InSb and GaInAsSb epilayers by Molecular Beam Epitaxy MBE on GaAs substrates and homoepitaxial growth of InSb have been determined. A new procedure for expeditious removal of oxide desorption from InSb has been found. InSb epilayers grown on InSb substrate after the above oxide desorption exhibited x-ray rocking curve with full width half maxima of 13 arc-sec, reproducibly. Efforts of our research have also been devoted to aspects of material characterization. Low temperature photoreflectance PR of Te- doped GaSb has been used to determine the transition energy of spin-orbit split component of the fundamental band gap. Temperature dependence of this transition energy has been determined. These are the first PR reports on GaSb. Theoretical calculations of a novel InAsSbInT1Sb superlattice structure lattice-matched to InSb indicated a type I band alignment, with optical band gap in the long-wavelength region.

Author(s):
Iyer, Shanthi N.
Author Organization(s):
NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO
Descriptive Note:
Final rept. 15 Jan 93-14 Mar 97,
Pagination:
0049

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
F49620-93-1-0111
Monitor Series:
AFOSR
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_6.3_Net Management; JCA_1_Force Support; JCA_1.2_Force Preparation; JCA_5_Command and Control; JCA_1.2.3_Educating; JCA_5.3_Planning; JCA_6.2.3_Core Enterprise Services; JCA_1.2.5_Lessons Learned; JCA_3.2_Engagement; JCA_3_Force Application; JCA_6.2_Enterprise Services
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM COMPOUNDS, *MOLECULAR BEAM EPITAXY, THERMAL PROPERTIES, ORBITS, REMOVAL, OPTIMIZATION, COMPUTATIONS, MATERIALS, GALLIUM ARSENIDES, EPITAXIAL GROWTH, SUBSTRATES, SEMICONDUCTORS, ALIGNMENT, OXIDES, TRANSITIONS, SPLITTING, LONG WAVELENGTHS, DESORPTION, INDIUM, ARSENIC, TELLURIUM, ANTIMONIDES, SOLID STATE CHEMISTRY, I BAND
Field(s)/Group(s):
Inorganic Chemistry, Crystallography, Solid State Physics
Keyword(s):
*GALLIUM INDIUM ARSENIC ANTIMONIDE, GAINASSB, EPILAYERS, HOMOEPITAXIAL GROWTH, X RAY ROCKING CURVE, FULL WIDTH HALF MAXIMA, PR(PHOTOREFLECTANCE), SPIN ORBIT, TRANSITION ENERGY
Report Date:
1997 Jul 23
Creation Date:
1997 Sep 03