SiGe Power HBT.

reportActive / Technical Report | Accession Number: ADA320364 | Open PDF

Abstract:

The objective of this program is the development and demonstration of a viable SiGe power HBT device design and associated processes that will demonstrate greater than 1 Watt of output power at 6 and 8 GHz.

Author(s):
Ziegner, B. A.
Author Organization(s):
M/A-COM CORPORATE RESEARCH AND DEVELOPMENT CENTER LOWELL MA
Descriptive Note:
Progress rept. for Dec 96,
Pagination:
0003

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-95-C-2022
Monitor Series:
NRL
 Subject Terms
Joint Capability Areas:
JCA_5.3_Planning; JCA_5_Command and Control
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*BIPOLAR TRANSISTORS, *JUNCTION TRANSISTORS, HETEROJUNCTIONS, SILICON COMPOUNDS, THIN FILM RESISTORS, THIN FILM CAPACITORS
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
HBT(HETEROJUNCTION BIPOLAR TRANSISTOR)
Report Date:
1997 Jan 01
Creation Date:
1997 Feb 05