Final Technical Report for JSEP Fellowship Executive Summary (Gross-Sectional Scanning/Tunneling Microscopy Investigations of Cleaned III-V Heterostructures).

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Abstract:

Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy XSTM. This summary and attached thesis detail the development and application of XSTM to III-V heterostructures accomplished during the term of the JSEP Fellowship of Warren Wu. An ultra-high vacuum UHV system dedicated to XSTM was specifically designed and constructed as part of this work. Reported for the first time were XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering SILO process as well as the first XSTM data on working device structures. These working device structures include resonant tunneling diode RTD structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor MODFET structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.

Author(s):
Wu, Warren
Author Organization(s):
ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Descriptive Note:
Final rept. 1 Jul 93-31 Jul 96,
Supplementary Note:
DOI: 10.21236/ADA319819
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFOSR-TR-97-0004
Contract/Grant Number(s):
F49620-93-1-0443
Task Number(s):
AS
Project Number(s):
2305
Monitor Series:
TR-97-0004, AFOSR
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*QUANTUM ELECTRONICS, *NANOTECHNOLOGY, SCANNING ELECTRON MICROSCOPES, HETEROJUNCTIONS, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, STRUCTURES, FIELD EFFECT TRANSISTORS, ELECTRON MICROSCOPY, RESONANCE
Field(s)/Group(s):
Solid State Physics
Keyword(s):
QUANTUM DOTS, QUANTUM WIRES, SILO(STRAIN INDUCED LATERAL LAYER ORDERING), MODFET(MODULATION DOPED FIELD EFFECT TRANSISTORS), MODFET SEMICONDUCTORS, INDIUM ARSENIDES, PE61102F, WUAFOSR2305AS
Report Date:
1996 Dec 16
Creation Date:
1997 Jan 29