Power Recovery of Radiation Damaged MOCVD Grown Indium Phosphide on Silicon Solar Cells Through Argon-Ion Laser Annealing.

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Abstract:

This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InPSi cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 Wsq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of np-type cells resulted in recovery of 48. Pn type cells lost 4 to 12 of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70 in np type cells. Pn-type cells recovered approximately 16 of lost power. Results indicate that significant power recovery results from the annealing of defects within np type InPSi solar cells.

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