Scanning Electron Microscope (SEM).

Since the arrival of the Scanning Electron Microscope SEM, the Center for Quantum Devices was able to further improve progress in the development of high power laser diodes, long wavelength infrared detectors, midinfrared lasers 2-5 um, QWIPs, and further exploit GaN, AlN, and AlGaN films. The SEM system was utilized in diverse areas in the optoelectronics field. For instance, the system was used in the investigation of the buried ridge laser fabrication by monitoring the post etching surface roughness, detecting contamination, and induce defects along the mesa sidewalls during the processing and after regrowth of the confinement layer over the 1 um active region. One important factor important factor in the progress of the buried ridge lasers is the mesa height, orientation and dimension of the narrow 1 micrometer active region. The SEM was used to monitor the surface roughness, height, orientation and dimension of the mesa sidewalls. The SEM will further be used for MOPAs.