IR Materials Producibility.

reportActive / Technical Report | Accession Number: ADA306493 | Open PDF

Abstract:

The formation energy for mercury vacancy - tellurium antisite pairs is calculated. We developed a method for calculating the ionization energies of the defects in semiconductors. The electron-phonon interaction-induced band-edge shifts in semiconductors are calculated using accurate band structures. The temperature variation of gaps in GaAs done to validate our method and Hg0.78Cd0.22Te have been calculated and are found to agree well with experiments.

Author(s):
Sher, A. ; Berding, M. A. ; Paxton, A. T. ; Muller, M.
Author Organization(s):
SRI INTERNATIONAL MENLO PARK CA
Descriptive Note:
Quarterly technical rept. no. 7, 1 Feb-30 Apr 94,
Supplementary Note:
DOI: 10.21236/ADA306493
Pagination:
0012

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SRI-3820
Contract/Grant Number(s):
ARPA ORDER-8557, MDA972-92-C-0053
Monitor Series:
ARPA
 Subject Terms
Joint Capability Areas:
JCA_1.2.7_Experimentation; JCA_1_Force Support; JCA_8_Building Partnerships; JCA_1.3_Human Capital Management; JCA_1.3.2_Personnel Management; JCA_5_Command and Control; JCA_8.2_Shape
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ELECTROOPTICS, *PHOTONICS, *INFRARED DETECTORS, *INFRARED OPTICAL MATERIALS, GALLIUM ARSENIDES, SEMICONDUCTORS, POINT DEFECTS, IONIZATION, FOCAL PLANES, MERCURY CADMIUM TELLURIDES, TELLURIUM
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices, Infrared Detection and Detectors
Keyword(s):
IRFPA(INFRARED FOCAL PLANE ARRAYS)
Report Date:
1994 Jun 03