'InAsP/InGaAs Materials Development for 2.1 micrometers Avalanche Photodiodes. Phase 2.

reportActive / Technical Report | Accession Number: ADA299236 | Open PDF

Abstract:

Detailed measurements were carried out on our full InGaAsInAsP APD structure optimized to detect light out to 2.l micrometers. Avalanche gains well above ten were confirmed independently, at Sarnoff as well as at Princeton University. Figures 1 and 2 contains some typical data from two 100 micrometers-diameter mesa devices. Note the gains of 10-40, dark currents near or below 1 micro a at -10V and breakdown voltages of 30-35 volts. An 8 micrometers diameter single-mode fiber was used to scan light across the entire active region to check for edge breakdown. No enhanced gain was detected near the edges, thus validating our p-substrate-mesa approach to this device. jg p.2

Author(s):
Olsen, Gregory H. ; Goodman, Alvin
Author Organization(s):
SENSORS UNLIMITED INC PRINCETON NJ
Descriptive Note:
Quarterly rept. no. 6, Jan-Mar 95,
Pagination:
0011

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-93-C-0254
Monitor Series:
ONR
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM ARSENIDES, *INDIUM PHOSPHIDES, *PHOTODIODES, *AVALANCHE DIODES, SCANNING, FIBERS, MATERIALS, COMPOSITE MATERIALS, LIGHT, ELECTRONIC EQUIPMENT, VOLTAGE, SUBSTRATES, SEMICONDUCTOR DIODES, BREAKDOWN(ELECTRONIC THRESHOLD)
Field(s)/Group(s):
Inorganic Chemistry, Electrical and Electronic Equipment, Laminates and Composite Materials
Keyword(s):
INGAAS, INASP, INDIUM GALLIUM ARSENIDE, INDIUM ARSENIC PHOSPHIDE, DARK CURRENTS, MESA, EDGES
Report Date:
1995 Apr 24