Use of D2 to Elucidate OMVPE Growth Mechanisms.
Abstract:
The research concentrated on two important areas of organometallic vapor phase epitaxial growth 1 A study of the pyrolysis reactions and rates for five new antimony precursors trivinylantimony TVSb, triisopropylantimony TIPSb, triallylantimony TASb, tertiary- butyldimethyl-antimony TBDMSb, and diisopropylantimonyhydride DIPSbH. They have been compared with the standard precursor, trimethylantimony TMSb. The pyrolysis temperatures for TIPSb, TASb, TBDMSb, and DIPSbH are all much lower than for TVSb, which is similar to TMSb. The pyrolysis mechanisms are surprisingly dissimilar. 2 The effect of adding tertiarybutyl radicals from azo-t-butane pyrolysis on the low temperature growth of GaAs using trimethylgallium TMGa and arsine. The pyrolysis of both precursors is stimulated by t-butyl radicals. The growth rate at 450 deg C is found to be enhanced by a factor of 6, giving good morphology layers. The properties of the layers were studied using X-ray diffraction, photoluminescence, and Raman spectroscopy. jg