Transport Limitations in Selective Diamond Deposition.

reportActive / Technical Report | Accession Number: ADA294686 | Open PDF

Abstract:

A high-selectivity diamond deposition process has been developed for feature sizes ranging from 0.6 micrometer to 2 cm. Variations in diamond growth rate as a result of this patterning have been observed and modeled by a finite difference method. This work provides a critical test of the interplay between surface kinetics and mass transport effects on the chemical vapor deposition process. The control of crystallite spacing may prove useful in fabrication of devices for cold-cathode emission and in growing contiguous polycrystalline films with well-defined grain structure. jg

Author(s):
Gleason, Karen K.
Author Organization(s):
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMICAL ENGINEERING
Descriptive Note:
Annual progress rept. no. 1, 1 Jul 94-30 Jun 95,
Pagination:
0012

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-94-1-0908
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_5.3_Planning; JCA_5_Command and Control; JCA_1.2.7_Experimentation; JCA_3.2_Engagement; JCA_3_Force Application
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*DIAMONDS, *DEPOSITION, *TRANSPORT, TEST AND EVALUATION, EMISSION, GROWTH(GENERAL), FILMS, FABRICATION, CHEMICAL VAPOR DEPOSITION, SURFACES, FINITE DIFFERENCE THEORY, LIMITATIONS, MASS TRANSFER, KINETICS, GRAIN STRUCTURES(METALLURGY), COLD CATHODE TUBES, POLYCRYSTALLINE
Field(s)/Group(s):
Inorganic Chemistry, Physical Chemistry, Coatings, Colorants and Finishes, Crystallography
Keyword(s):
SELECTIVE
Report Date:
1995 Jun 30