Design and Development of Low Noise, High Speed, High Electron Mobility Transistors (HEMTs).

reportActive / Technical Report | Accession Number: ADA289953 | Open PDF

Abstract:

An investigation was undertaken to design and fabricate low noise, high speed InP-based HEMTs. The investigation consisted of several components the development of quantum corrected hydrodynamics simulation codes application of these codes to aid in design and optimization of HEMTs for low noise, high speed operation and fabrication and testing of the resulting designs. Through the research effort, HEMTs of previously unobtained performance levels were designed and fabricated. These results showed that the use of simulation can play a significant and important role in extracting performance from proposed device Structures, and should be used as an integral part of the design process. jg

Author(s):
Kreskovsky, J. P. ; Grubin, H. L.
Author Organization(s):
SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Descriptive Note:
Final rept. 1 May 92-31 Jul 94,
Pagination:
0125

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SRA-R94-9335-F, ARO-29322.1-EL-SB2
Contract/Grant Number(s):
DAAL03-92-C-0014
Monitor Series:
29322.1-EL-SB2, ARO
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_5.2_Understand; JCA_5.2.3_Share Knowledge and Situational Awareness
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*HYDRODYNAMICS, *TRANSISTORS, *ELECTRON MOBILITY, *LOW NOISE, COMPUTER PROGRAMS, SIMULATION, OPTIMIZATION, HIGH RATE, QUANTUM WELLS, FABRICATION, CODING, OPERATION, EXTRACTION, INDIUM PHOSPHIDES
Field(s)/Group(s):
Electrical and Electronic Equipment, Inorganic Chemistry, Acoustics
Keyword(s):
HEMT(HIGH ELECTRON MOBILITY TRANSISTORS)
Report Date:
1994 Sep 01