IR Materials Producibility

reportActive / Technical Report | Accession Number: ADA284263 | Open PDF

Abstract:

The work summarized in this report covers the eighth quarter of a program with a goal that is threefold first, to study the properties of native point defects in infrared focal-plane array IRFPA active and substrate materials second, to study the properties of native point defects in two classes of photonic materials, the wide-gap II-VI compounds ZnSe as the prototype for which impurity properties will also be calculated and the nonlinear optical materials LiNbO3 as the prototype the third, to study the properties of HgZnTe as a very-long-wave infrared VLWIR detector material. During the eighth quarter We have continued the refinement of the calculation of the tellurium antisite-mercury vacancy pair in HgCdTe. We find a binding energy of more than 1 eV. We have developed a strategy for calculating the ionization energies of defects in semiconductors, and have tested the strategy on the arsenic antisite in GaAs with good results. We have begun the calculation of the ionization energies in CdTe and ZnSe, and preliminary results are reported. Transport-related properties have been calculated for HgCdTe and HgZnTe and compared with results using the effective mass approximation.

Author(s):
Sher, A. ; Berding, M. A. ; Krishnamurthy, S.
Author Organization(s):
SRI INTERNATIONAL MENLO PARK CA
Descriptive Note:
Quarterly technical rept. no. 8, 1 May-31 Aug 1994
Pagination:
0025

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
MDA972-92-C-0053, $$ARPA ORDER-8557
Monitor Series:
ARPA
 Subject Terms
Joint Capability Areas:
JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_5_Command and Control; JCA_5.3_Planning; JCA_1.3_Human Capital Management; JCA_1_Force Support; JCA_1.3.2_Personnel Management; JCA_1.2.5_Lessons Learned; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*OPTICAL MATERIALS, *CADMIUM TELLURIDES, *INFRARED OPTICAL MATERIALS, *ZINC SELENIDES, *LITHIUM NIOBATES, DETECTORS, STRATEGY, COMPOSITE MATERIALS, MASS, SUBSTRATES, NONLINEAR OPTICS, POINT DEFECTS, CHEMICAL REACTIONS, GROUP II VI COMPOUNDS, TELLURIUM, ARSENIC, FOCAL PLANES, VACANCIES(CRYSTAL DEFECTS), TELLURIDES, IONIZATION, MERCURY, TRANSPORT PROPERTIES, PHOTONICS, SEMICONDUCTORS, GALLIUM ARSENIDES, ENERGY, ARRAYS, PROTOTYPES
Field(s)/Group(s):
Inorganic Chemistry, Crystallography, Optics, Solid State Physics
Keyword(s):
*PRODUCIBILITY, LPN SRI 3820, NATIVE, WIDE GAP, VLWIR(VERY LONG WAVE INFRARED), CALCULATIONS, ANTISITE, BINDING ENERGY, MERCURY TELLURIDES
Report Date:
1994 Sep 01