Development of Nanostructure Fabrication Technology and New Electron-Quantum Wave Devices
Abstract:
Under the three-year grant, we have investigated and developed various nanofabrication technologies including construction of an ultra-high resolution electron beam lithography system, sub-20 nm electron beam lithography techniques, etching of sub-40 nm silicon pillars and ridges b fabricated various nanoscale transistors including a number of new device structures c studied quantum effects and single electron effects d designed, fabricated, and investigated ultra-fast metal-semiconductor-metal photodetectors with the record speeds on various of semiconductors, including low-temperature GaAs with 510 GHz bandwidth, bulk GaAs with 300 GHz, and bulk Si with 75 GHz.
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