Annual Report for Contract N00014-90-J-1267. (Illinois University, Loomis Laboratory of Physics)

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Abstract:

The objective is to understand the electronic structures of semiconductor surfaces and heterostructures in relation to crystal growth. The approach is to perform first-principle theoretical calculations to determine the structures of surface and interface identify the main spectral features of the reflectance-difference spectra of 001 GaAs with transitions involving Ga-Ga dimers and As-As dimers.

Author(s):
Chang, Yia-chung ; Ren, S-f. ; Gu, Z-q.
Author Organization(s):
ILLINOIS UNIV AT URBANA LOOMIS LAB OF PHYSICS
Descriptive Note:
Annual rept. 1 Oct 1992-30 Sep 1993
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-90-J-1267
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_5.3_Planning; JCA_5_Command and Control; JCA_5.3.3_Develop Strategy; JCA_5.3.4_Develop Courses of Action; JCA_5.3.5_Analyze Courses of Action
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*ELECTRONICS, *GALLIUM ARSENIDES, *STRUCTURES, *SURFACE PROPERTIES, *SEMICONDUCTORS, *REFLECTANCE, OPTICAL PROPERTIES, HYDROGEN, ZINC, TRANSITIONS, SELENIDES, SPIN STATES, DIMERS, CRYSTAL GROWTH, CADMIUM, SILICON, SPECTRA, SUPERLATTICES, COMPUTATIONS, INTERFACES, QUANTUM WELLS
Field(s)/Group(s):
Physical Chemistry, Electrical and Electronic Equipment, Crystallography, Atomic and Molecular Physics and Spectroscopy
Keyword(s):
HETEROSTRUCTURES, DIFFERENCE, RECONSTRUCTIONS
Report Date:
1994 Feb 14