Study of the Homogeneity of InP Wafers

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Abstract:

The homogeneity of InP substrate at both microscope and microscopic scale has been studied by Raman microprobe and photocurrent mapping. Raman microprobe was used for any type of substrate, revealing revealing different structural and electronic properties of different extended defects. This study was correlated with photoetching and a relation between revealed defects and Raman features was established. Semiinsulating substrate were analyzed by photocurrent mapping. Three excitation wave lengths were used, revealing different different sources of non uniformly in these wafers. The technique is shown to be quite sensitive to electrical non homogeneities, concerning the iron distribution across the wafer.

Author(s):
Jimenez, J. ; Martin, P. ; Avella, M.
Author Organization(s):
VALLADOLID UNIV (SPAIN) SISICA DE LA MATERIA CONVENSADA
Descriptive Note:
Final rept. 15 Jul 1991-14 Jul 1993
Pagination:
0080

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release, Document Partially Illegible
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited. Document Partially Illegible.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
EOARD-TR-94-01
Contract/Grant Number(s):
AFOSR-91-0278
Monitor Series:
TR-94-01, EOARD
 Subject Terms
Joint Capability Areas:
JCA_7.2.1_Mitigate Lethal Effects; JCA_7.2_Mitigate; JCA_7_Protection; JCA_1.3.2_Personnel Management; JCA_5_Command and Control; JCA_5.3_Planning
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ELECTROOPTICS, *RAMAN SPECTROSCOPY, *OPTICAL COMMUNICATIONS, *INDIUM PHOSPHIDES, *CRYSTAL GROWTH, EPITAXIAL GROWTH, SUBSTRATES, HOMOGENEITY, ETCHING, IRON, DEFECTS(MATERIALS), DOPING, PHOTOCONDUCTORS, WAFERS
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices, Crystallography, Atomic and Molecular Physics and Spectroscopy, Telemetry, Non-Radio Communications
Keyword(s):
PHOTOCURRENT
Report Date:
1993 Jul 01